maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 6.0 v collector current i c 1.0 a power dissipation p d 1.65 w* operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 76 c/w electrical characteristics per transistor: (t a =25c unless otherwise noted) typ symbol test conditions min npn pnp max units i cbo v cb =40v 100 na i ebo v eb =6.0v 100 na bv cbo i c =100a 40 v bv ceo i c =10ma 25 v bv ebo i e =100a 6.0 v v ce(sat) i c =50ma, i b =5.0ma 20 25 50 mv v ce(sat) i c =100ma, i b =10ma 35 40 75 mv ctlm3410-m832d CTLM7410-M832D ctlm3474-m832d surface mount dual, low v ce (sat) silicon transistors tlm832d case central semiconductor corp. tm r1 (15-november 2006) marking codes: ctlm3410-m832d: cfg CTLM7410-M832D: cfh ctlm3474-m832d: cfj bottom view top view applications ? switching circuits ? dc / dc converters ? lcd backlighting ? battery powered / portable equipment applications including cell phones, digital cameras, pagers, pdas, notebook pcs, etc. description: the central semiconductor corp. ctlm3410-m832d (dual npn), CTLM7410-M832D (dual pnp), and ctlm3474-m832d (complementary npn & pnp) are low vce (sat) transistors packaged in the small, thermally efficient, 3x2mm tiny leadless module (tlm ? ) surface mount case. these devices are designed for applications where small size, operational efficiency, and low energy consumption are the prime requirements. due to its leadless package design this device is capable of dissipating up to 4 times the power of similar devices in comparable sized surface mount packages. features ? dual chip device ? high current (1.0a) transistors ? low v ce(sat) transistors (450mv @ i c = 1.0a max) ? high power to footprint ratio of 275mw per sq mm (package power dissipation / package surface area) ? small tlm 3x2mm leadless surface mount package ? complementary devices *fr-4 epoxy pcb with copper mounting pad area of 54mm 2
central semiconductor corp. tm ctlm3410-m832d CTLM7410-M832D ctlm3474-m832d surface mount dual, low v ce (sat) silicon transistors r1 (15-november 2006) electrical characteristics per transistor (continued): typ symbol test conditions min npn pnp max units v ce(sat) i c =200ma, i b =20ma 75 80 150 mv v ce(sat) i c =500ma, i b =50ma 130 150 250 mv v ce(sat) i c =800ma, i b =80ma 200 220 400 mv v ce(sat) i c =1.0a, i b =100ma 250 275 450 mv v be(sat) i c =800ma, i b =80ma 1.1 v v be(on) v ce =1.0v, i c =10ma 0.9 v h fe v ce =1.0v, i c =10ma 100 h fe v ce =1.0v, i c =100ma 100 300 h fe v ce =1.0v, i c =500ma 100 h fe v ce =1.0v, i c =1.0a 50 f t v ce =10v, i c =50ma, f=100mhz 100 mhz c ob v cb =10v, i e =0, f=1.0mhz (ctlm3410-m832d) 10 pf c ob v cb =10v, i e =0, f=1.0mhz (CTLM7410-M832D) 15 pf tlm832d - mechanical outline ctlm3410-m832d CTLM7410-M832D ctlm3474-m832d lead code: 1) base q1 2) emitter q1 3) base q2 4) emitter q2 5) collector q2 6) collector q2 7) collector q1 8) collector q1 ctlm3410-m832d dual npn marking code: cfg CTLM7410-M832D dual pnp marking code: cfh ctlm3474-m832d complementary npn & pnp marking code: cfj
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